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Antiferroelectric Thin-Film Capacitors with High

Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times November 2015

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Antiferroelectric nano-heterostructures filler for improving energy

Antiferroelectric nano-heterostructures filler for improving energy storage performance of PVDF-based composite films Huayang Zhu a, Xiaohui Liu a, Hairui Bai a,

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PbHfO3-based antiferroelectric materials: Fundamentals,

The potential applications of the PbHfO3-based antiferroelectric material in the fields of energy storage, electrocaloric effects, and synaptic device

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Ultra-high energy storage density and scale-up of antiferroelectric

Abstract Antiferroelectric (AFE) HfO 2 /ZrO 2 -based thin films have recently emerged as a potential candidate for high-performance energy storage capacitors in miniaturized power

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Antiferroelectric Thin-Film Capacitors with High Energy

Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times Chang Won Ahn, Gantsooj Amarsanaa, Sung Sik Won, Song A

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Enhanced energy storage in antiferroelectrics via antipolar

This strategy presents new opportunities to manipulate polarization profiles and enhance energy storage performances in antiferroelectrics.

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Tailoring high-energy storage NaNbO3-based materials from

Reversible field-induced phase transitions define antiferroelectric perovskite oxides and lay the foundation for high-energy storage density materials, required for future

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Effect of annealing temperature on energy storage

Using the radio frequency magnetron sputtering process, NaNbO3-based antiferroelectric thin films were obtained on Pt(111)/Ti/SiO2/Si substrates. The effects of

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Phase stability and energy storage properties of polycrystalline

These findings highlight the potential of NN-based thin films as lead-free candidates for energy storage, emphasizing the importance of stabilizing the AFE phase under

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Thin films of relaxor ferroelectric/antiferroelectric heterolayered

Abstract We report the energy-storage performance and electric breakdown field of antiferroelectric PbZrO3 (PZ) and relaxor ferroelectric Pb0.9 La 0.1 (Zr 0.52 Ti 0.48)O 3

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Antiferroelectric Thin-Film Capacitors with High

PYZST thin-films exhibited a high recoverable energy density of Ureco = 21.0 J/cm 3 with a high energy-storage efficiency of η = 91.9%

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Robust Energy Storage Property of La-Doped PZT

Antiferroelectric (AFE) films have received a lot of attention for their high energy storage density and temperature stability, giving them

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Lead-free relaxor-ferroelectric thin films for energy

To estimate the energy conversion density of the thin films of ferroelectrics, we recorded the P-E hysteresis curves of these thin films at different temperatures, Fig. 6 a.

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Antiferroelectric Oxide Thin-Films: Fundamentals, Properties,

Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and

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Enhanced energy storage performance in Ag(Nb,Ta)O3 films via

Dielectric capacitors with ultrahigh power density and ultra-fast charge/discharge rate are highly desired in pulse power fields. Environmental-friendly AgNbO3 family have been

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Ideal antiferroelectricity with large digital electrostrain in PbZrO3

Nguyen, M. D. & Rijnders, G. Comparative study of piezoelectric response and energy-storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric

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Large Energy Storage Density and High Thermal Stability in a

A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100)

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High-energy storage performance achieved in PbZrO3 thin films

Abstracts The lead zirconate (PZO) anti-ferroelectric thin film capacitors, known for their high power density and rapid discharge speed, have garnered significant attention for

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Energy storage performance of PbZrO3-ZrO2 nanocomposite films

For application of antiferroelectric materials in dielectric energy storage capacitors, how to improve their electrical breakdown strength is currently a key issue that

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Recent Development of Lead-free Relaxor Ferroelectric and

Request PDF | On Feb 1, 2024, Ampattu Ravikumar Jayakrishnan and others published Recent Development of Lead-free Relaxor Ferroelectric and Antiferroelectric Thin Films as Energy

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Antiferroelectric Thin-Film Capacitors with High Energy-Storage

We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb (0.97)Y (0.02) [ (Zr (0.6)Sn (0.4)) (0.925)Ti

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Designing lead-free antiferroelectrics for energy storage

Antiferroelectric capacitors hold great promise for high-power energy storage. Here, through a first-principles-based computational approach, authors find high theoretical

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Enhanced energy-storage performances of (1-x)PbZrO

In this work, (1-x)PbZrO 3 -xPbSnO 3 (PZO-PSO) antiferroelectric thin films were prepared on Pt (111)/Ti/SiO 2/Si substrates by a sol-gel method in order to improve

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High energy storage performance in Ca-doped PbZrO3 antiferroelectric films

In this work, antiferroelectric Pb 1-x Ca x ZrO 3 (PCZ) thin films with different concentrations of Ca2+ were prepared by chemical solution deposition, and the effects of Ca

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High energy storage performance for flexible PbZrO3 thin films by

Abstract Antiferroelectric film capacitors have attracted increasing attention due to their excellent energy storage properties. In this work, PbZrO 3 (PZO) antiferroelectric films

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Self-polarization and energy storage performance in antiferroelectric

In this study, we propose an artificial antiferroelectric-insulator multilayer thin films to regulate the polarization behaviors and optimize energy storage performances of

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PbZrO3-based thin film capacitors with high energy

Antiferroelectric (Pb 0.87 Sr 0.05 Ba 0.05 La 0.02) (Zr 0.52 Sn 0.40 Ti 0.08)O 3 thin film capacitors were fabricated for dielectric energy

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High-entropy enhanced capacitive energy storage

Peng, B. et al. Large energy storage density and high thermal stability in a highly textured (111)-oriented Pb 0.8 Ba 0.2 ZrO 3 relaxor thin film with the coexistence of

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Ferroelectric/paraelectric superlattices for energy storage

Several works have found or predicted antiferroelectricity in electrostatically frustrated perovskite oxides. Antiferroelectric phases were

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Significantly improved energy storage properties and cycling

Significantly improved energy storage properties and cycling stability in La-doped PbZrO3 antiferroelectric thin films by chemical pressure tailoring

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Enhanced energy storage in antiferroelectrics via antipolar

This study reports that incorporating non-polar nanodomains into antiferroelectrics greatly enhanced the energy density and efficiency.

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Effect of Sn4+ doping on antiferroelectric and energy storage

Effect of Sn4+ doping on antiferroelectric and energy storage properties of PbHfO3 thin films prepared by a sol-gel process

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Giant energy storage and power density negative capacitance

First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO2–ZrO2 films are engineered near a field-driven ferroelectric phase transition to exhibit

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High-energy storage density and excellent temperature

In recent years, the demand for electric energy storage is on the rise.1-3The high-energy storage density dielectric capacitors have attracted much attention, which has been considered as the

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Self-polarization and energy storage performance in antiferroelectric

The values of recoverable energy storage density of 32.6 J/cm3 and efficiency of 88.1% are obtained for trilayer films annealed at 550 °C, meaning that the design of

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Ultrahigh-Energy Storage Properties of (PbCa)ZrO3

The findings reported herein help to elucidate the relationship between energy storage performance and thin-film microstructure, thereby providing an

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Fluorite-Structured Ferroelectric-/Antiferroelectric

This work reviews the energy storage properties of fluorite-structured antiferroelectric oxides (HfO 2 and ZrO 2), along with 3-D device

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High energy storage of PbZrO3 antiferroelectric thin films via

This energy storage performance can be attributed to the synergistic effect of high electric breakdown strength of dense pyrochlore phase structure and high maximum

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Enhanced energy storage properties in PbZrO3 thin films via the

Also, the energy storage efficiency of the composite film reaches 48%. Accordingly, we demonstrate a simple and convenient method by adding NiO to fabricate thin

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Antiferroelectric oxide thin-films: Fundamentals, properties, and

Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer,

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High energy storage performance of (Pb,La)ZrO3 thin films on

PbZrO 3 (PZO) demonstrates outstanding energy storage properties due to its characteristic electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transition.

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About Antiferroelectric thin film energy storage

About Antiferroelectric thin film energy storage

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About Antiferroelectric thin film energy storage video introduction

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